Energy states and magnetization in nanoscale quantum rings
Identifieur interne : 00DD77 ( Main/Repository ); précédent : 00DD76; suivant : 00DD78Energy states and magnetization in nanoscale quantum rings
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Abstract
In this paper we calculate electron energy states and magnetization for torus shaped nanoscale quantum rings with external magnetic fields. We use the three-dimensional effective one-band Hamiltonian, the energy and position-dependent quasiparticle effective mass approximation, and the Ben Daniel-Duke boundary conditions. The dependence of the energy spectrum on the sizes and shapes of the quantum rings was calculated and the result agrees with experimental observations. Penetration of the magnetic field into torus region results in an aperiodic oscillation of magnetization at zero temperature. It saturates with the increasing of the magnetic field strength.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Energy states and magnetization in nanoscale quantum rings</title><author><name sortKey="Voskoboynikov, O" uniqKey="Voskoboynikov O">O. Voskoboynikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Li, Yiming" uniqKey="Li Y">Yiming Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Nano Device Laboratories, Hsinchu 300, Taiwan</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>National Nano Device Laboratories, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Lu, Hsiao Mei" uniqKey="Lu H">Hsiao-Mei Lu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>National Tsing Hua University, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>National Tsing Hua University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Shih, Cheng Feng" uniqKey="Shih C">Cheng-Feng Shih</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Lee, C P" uniqKey="Lee C">C. P. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0540132</idno><date when="2002-10-15">2002-10-15</date><idno type="stanalyst">PASCAL 02-0540132 AIP</idno><idno type="RBID">Pascal:02-0540132</idno><idno type="wicri:Area/Main/Corpus">00E483</idno><idno type="wicri:Area/Main/Repository">00DD77</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Effective mass</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Magnetization</term><term>Nanostructured materials</term><term>Semiconductor quantum wells</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7321</term><term>Etude théorique</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Gallium arséniure</term><term>Puits quantique semiconducteur</term><term>Nanomatériau</term><term>Aimantation</term><term>Masse effective</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper we calculate electron energy states and magnetization for torus shaped nanoscale quantum rings with external magnetic fields. We use the three-dimensional effective one-band Hamiltonian, the energy and position-dependent quasiparticle effective mass approximation, and the Ben Daniel-Duke boundary conditions. The dependence of the energy spectrum on the sizes and shapes of the quantum rings was calculated and the result agrees with experimental observations. Penetration of the magnetic field into torus region results in an aperiodic oscillation of magnetization at zero temperature. It saturates with the increasing of the magnetic field strength.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>66</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Energy states and magnetization in nanoscale quantum rings</s1></fA08><fA11 i1="01" i2="1"><s1>VOSKOBOYNIKOV (O.)</s1></fA11><fA11 i1="02" i2="1"><s1>LI (Yiming)</s1></fA11><fA11 i1="03" i2="1"><s1>LU (Hsiao-Mei)</s1></fA11><fA11 i1="04" i2="1"><s1>SHIH (Cheng-Feng)</s1></fA11><fA11 i1="05" i2="1"><s1>LEE (C. P.)</s1></fA11><fA14 i1="01"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>National Nano Device Laboratories, Hsinchu 300, Taiwan</s1><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>National Tsing Hua University, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ></fA14><fA20><s2>155306-155306-6</s2></fA20><fA21><s1>2002-10-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0540132</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper we calculate electron energy states and magnetization for torus shaped nanoscale quantum rings with external magnetic fields. We use the three-dimensional effective one-band Hamiltonian, the energy and position-dependent quasiparticle effective mass approximation, and the Ben Daniel-Duke boundary conditions. The dependence of the energy spectrum on the sizes and shapes of the quantum rings was calculated and the result agrees with experimental observations. Penetration of the magnetic field into torus region results in an aperiodic oscillation of magnetization at zero temperature. 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